Abstract
Several processes based on the free-electron concept are briefly reviewed in this paper. Using a quantum-tunneling model, a simple theory for determining the effective mass of charge carriers in amorphous semiconductors is presented. It is shown that a charge carrier has different effective masses in the extended and tail states, and that the sign of the effective mass changes as the charge carrier crosses its mobility edge. This is used to explain the anomalous Hall coefficient observed in a-Si : H. The theory is used to calculate Tauc's absorption relation, theoretically. It is found that deviations from the Tauc plot observed in some a-solids may be attributed to the photon-energy-dependent matrix element. Some transport properties of charge carriers are also considered.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Materials Science: Materials in Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
