Abstract
Electron transport in 5 μm long InP n+nn+ structure with the n-region doping of 1015cm−3 is theoretically investigated by the Monte Carlo Particle (MCP) technique at low lattice temperature (T = 10 K), when dominating scattering mechanism is the optical phonon emission. It is shown that at the constant bias a free-carrier grating (FCG) can be formed inside the n-region. The simple model of FCG formation is proposed and verified by MCP simulation of electron transport and noise in the considered InP structure.
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