Abstract
We have studied silicon-doped Ga1−xAlxAs by low-temperature photoluminescence as a function of aluminum composition up to x ∼0.4 and as a function of Si doping at x ∼ 0.4. We have identified a donor-to-acceptor pair recombination band due to Si in the spectra at 5.5 K. The Si acceptor energy is determined from the peak position of the corresponding free-to-bound transition, which is observed in the 75-K continuous wave spectra or in the 5.5-K time-resolved spectra. It is found to vary from 35 to 62 meV in the range x ∼ 0 to 0.4 and the acceptor is suggested to be Si occuping arsenic sites. The variation of the ionization energy of SiAs with x is intermediate between that of GeAs which shows strong deviation from the effective mass theory and CAs which shows very little deviation.
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