Abstract
Surface segregation in boron-doped Ni3Al alloys containing 24–26% Al has been studied for temperatures between 600 and 1000°C. In agreement with earlier studies, boron was not observed to segregate to free surfaces at 1000°C, while sulfur was observed to segregate strongly. Between 600 and 800°C, both boron and nitrogen, as well as sulfur, were observed to segregate to surfaces damaged by sputter ion etching. Boron and nitrogen did not segregate strongly to well annealed surfaces in this temperature range, however, indicating possible effects of chemical order, defect structure, and /or nickel enrichment on the extent of interfacial boron segregation.
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