Abstract

Gallium nitride (GaN) is an III-V semiconductor with a direct band-gap of . GaN has important potentials in white light-emitting diodes, blue lasers, and field effect transistors because of its super thermal stability and excellent optical properties, playing main roles in future lighting to reduce energy cost and sensors to resist radiations. GaN nanomaterials inherit bulk properties of the compound while possess novel photoelectric properties of nanomaterials. The review focuses on self-assemblies of GaN nanoparticles without templates, growth mechanisms of self-assemblies, and potential applications of the assembled nanostructures on renewable energy.

Highlights

  • Gallium nitride (GaN) based semiconductors have attracted great attentions since the 1990s [1,2,3,4]

  • High-speed field-effect transistors and high-temperature microelectronic devices were developed using the material [2] in the 1990s; (4) GaN high-electron-mobility transistors (HEMTs) have been commercialized since 2006, applied at high efficiency and high voltage operation

  • GaN nanoparticles can be prepared from a reaction of gallium and ammonia by chemical vapor deposition (CVD) methods at 900–1150 ◦C [5,49,67,68,75], and from organic gallium compounds by detonations or pyrolysis [76,77,78]

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Summary

Introduction

Gallium nitride (GaN) based semiconductors have attracted great attentions since the 1990s [1,2,3,4]. (1) hexagonal GaN crystalline films have been fabricated as blue light emitting diodes (LEDs) [3,4,8,9,10] because of its special optical emission [11,12]. The alloyed InGaN- and AlGaN-based LEDs can emit colorful light from red to ultra-violet [9]; (2) GaN films have been employed to make violet (about 405 nm) laser diodes (LDs) [3,4], without use of nonlinear optical frequency-doubling; (3) The first GaN-based metal-semiconductor field-effect transistors (MESFET) were experimentally demonstrated in 1993 [13] and commercially available in 2010. The GaN-based devices, including LEDs, LDs, MESFETs, HEMTs, and solar cells, have valuable applications in military and out space activities, showing stability in radiation environments. The unique physical properties and potential applications of the free-standing assemblies are discussed at the end

Syntheses of GaN Nanoparticles
Chemical Vapor Deposition
Nitridation
Solvothermal Techniques
Ball-Milling Techniques
Other Techniques
Physical Properties of Crystalline Nanoparticles
Defects of GaN Nanoparticles
Defect Effects on Physical Properties
Applications of Nanoparticles
Free-standing Self-assembly of GaN Nanoparticles
GaN Nanospheres
GaN Squared Microtubes
GaN Nanocomposite Bulks
Photoluminescence
Raman Scattering
Photocatalytic Water Splitting
Piezoelectric Nanogenerators
Thermoelectric Devices
Other Potential Applications in Renewable Energy
Findings
Conclusions
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