Abstract
AbstractFree‐standing GaN thick films are successfully fabricated by employing intentional mechanical fracturing of Al2O3 substrates during HVPE growth followed by chemical lift‐off of Al2O3 substrates after growth. To do so, thermal stress induced in the Al2O3 substrates and overgrown GaN layers are controlled by adjusting the thickness of the Al2O3 substrates. The grown layers however consist of multi domains, which deteriorate crystal quality. Domains coalesce to form larger domains as the growth proceed, which results in an improvement in crystal quality. Bending of free‐standing GaN thick layers is of concave shape and its typical bending radius is 2.5 m (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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