Abstract
An analytical treatment of the thermal phenomena during free-running ruby laser annealing of boron implanted silicon is presented. The heat equation was solved for a simplified shape of the pulse train consisting of a uniform succession of triangular spikes, identical in energy. During one spike the optical and thermal parameters of the sample were taken constant, but for each new spike, new values of these parameters were calculated taking into account their temperature dependence. Such a model predicts the melting of the top surface before the laser pulse has ended, for energy densities higher than 9×104 J/m2. RHEED confirms the presence of recristallization at about the same value of the laser-pulse energy densities.
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