Free electron laser annealing of silocon carbibe

Abstract

We have applied a free electron laser (FEL) to crystallize amorphous silicon carbide (a-SiC) and to remove the damage and activate the dopant of a damaged layer of nitrogen implanted cubic silicon carbide (3C-SiC) films at room temperature. The FEL has two main characteristics, wavelength tunability and ultrashort-pulse operation (~10 ps) with intense peak power (~MW). The wave-length was selected at the energy of the Si-C stretch mode in order to excite the lattice vibration directly. We observed the crystallization of a-SiC occurs at room temperature when irradiation with a 12.6 µm FEL. The present results indicate that FEL annealing (12.6 µm: transverse optical mode, 10.3 µm: longitudinal optical mode) is effective for recrystallization and activation of an ion-implanted SiC films.