Abstract
A high-conductivity layer has been observed within the amorphous region of heavily implanted (6×1016 cm−2 of 2.7-MeV 31P ions) (111) surfaces of single-crystal Si after 500 °C annealing. The conducting layer was at the projected range of the 31P+ ions, and its location was determined from spreading resistance measurements. Microscopic examination, Coates-Kikuchi lines (SEM), and ion channeling showed that the conducting layer was within an amorphous region. Very-large-amplitude low-frequency ir interference reflection fringes developed with the onset of the conducting layer. We suggest that the large fringes are related to the dispersion produced by a damped plasma. Simplified model calculations are presented. The high-frequency interference fringes related to the implantation-induced structural damage virtually disappeared after annealing at 600 °C but the low-frequency ’’plasma fringes’’ remain. SEM and microscopic examination showed that the amorphous region had epitaxially recrystallized.
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