Abstract
In this work we introduced two beam photocarrier cross-modulation for creation of an optically driven photonic laser beam modulator using a semiconductor wafer as the active medium. Unlike other laser beam modulators, the process of modulation of an unmodulated sub-bandgap laser beam was made possible by generating a spatially- and free-carrier density-wave-dependent infrared absorption coefficient in the bulk of the semiconductor, following absorption of a collinear super-bandgap modulated laser beam. The experimental results showed that the modulation efficiency strongly depends on the transport parameters of the semiconductor material and on the power of the super-bandgap laser beam.
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