Abstract
In this paper, we propose an accurate method to extract the free carrier mobility in field effect transistors. This derivation relies only on the drift-diffusion transport model without the need to predefine the gate-voltage-mobility dependence. This approach has been assessed with technology computer-aided design simulations, confirming its robustness even in the presence of short-channel effects. Exploiting the proposed model, free carrier mobility is obtained in a 28-nm commercial bulk CMOS process at room temperature.
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