Free-carrier magneto-absorption by photon-ionised impurity magnetoplasmon processes in narrow-gap semiconductors

Abstract

The contribution of collective magnetoplasma excitation to the free-carrier absorption in polar, narrow-gap semiconductors is investigated. High-frequency conductivity in the presence of a weak magnetic field is calculated. In contrast to all previous theories the non-spherical, non-parabolic and multivalley conduction band structure is taken into account. The the oretical results are adopted for lead chalcogenides and compared with the experimental data for lead selenide and with recent theories in which band structure effects are neglected.