Abstract
Photoconduction spectra in three amorphous semiconductors have been measured as a function of light intensity. In As2S3, shrinkage of photoconductive response peak from 2.7 to 2.0 eV occurs with an increase in the light intensity from 10−3 to 108 W/cm2. In a-Si:H, intense illumination just enhances photocurrents, and intermediate features appear in As2Se3. The anomalous red shift of the photoconduction spectrum discovered in As2S3 can be accounted for as arising from a wide valence-band tail and slow hole transport.
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