Abstract
Transient reflectivity characteristics for epitaxial Ge 1-xSi x (x=0, 0.05, 0.1, 0.25) alloys have been measured at λ = 0.575μm, using 2ps pump and probe pulses with photogenerated carrier densities up to 10 19 cm −3. For all x we are able to separately determine negative (free carrier) and positive (lattice heating) contributions to the reflectivity change; the relative contributions of the latter are found to increase with increasing x. The evolution of the free carrier part is dominated by carrier-temperature-dependent diffusion.
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