Abstract
The paper reports on the free carrier absorption (FCA) loss associated with p‐i‐n silicon‐on‐insulator (SOI) phase modulator at λ = 1.55 μm. The analyses include the effect of injecting various free carrier concentrations on the FCA and its relationship to the modulator efficiency. The simulations are realized utilizing the 2‐D semiconductor simulation package SILVACO under DC operation. Our simulation result shows that by injecting more free carriers into the modulator waveguide, the FCA will increase as well as the modulation efficiency.
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