Abstract
Fragment ions produced from hexamethyldisilane (HMDS) in a Freeman-type ion source with a hot tungsten wire were studied using a low-energy mass analyzed ion beam system. Dominant fragment ions from HMDS were identified to be H+, H2+, C+, CH3+, Si+, SiCH4+, SiC2H6+, and SiC3H9+. The rates of ion fragment production strongly depended on the tungsten temperature. We conclude that the irradiation of the mass-selected SiCH4+ ions obtained from HMDS to Si substrates is useful for the secure epitaxial growth of SiC.
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