Fracture of solar-grade anisotropic polycrystalline Silicon: A combined phase field–cohesive zone model approach

Abstract

This work presents a novel computational framework to simulate fracture events in brittle anisotropic polycrystalline materials at the microscopical level, with application to solar-grade polycrystalline Silicon. Quasi-static failure is modeled by combining the phase field approach of brittle fracture (for transgranular fracture) with the cohesive zone model for the grain boundaries (for intergranular fracture) through the generalization of the recent FE-based technique published in [M. Paggi, J. Reinoso, Comput. Methods Appl. Mech. Engrg., 31 (2017) 145–172] to deal with anisotropic polycrystalline microstructures. The proposed model, which accounts for any anisotropic constitutive tensor for the grains depending on their preferential orientation, as well as an orientation-dependent fracture toughness, allows to simulate intergranular and transgranular crack growths in an efficient manner, with or without initial defects. One of the advantages of the current variational method is the fact that complex crack patterns in such materials are triggered without any user-intervention, being possible to account for the competition between both dissipative phenomena. In addition, further aspects with regard to the model parameters identification are discussed in reference to solar cells images obtained from transmitted light source. A series of representative numerical simulations is carried out to highlight the interplay between the different types of fracture occurring in solar-grade polycrystalline Silicon, and to assess the role of anisotropy on the crack path and on the apparent tensile strength of the material.