Fracture Analysis of Planar Cracks in 3D Thermal Piezoelectric Semiconductors

Abstract

The study of piezoelectric semiconductor (PSC) materials and devices is experiencing rapid growth, giving rise to a burgeoning research domain known as piezotronics. Understanding the fracture behavior of PSC materials is essential for designing robust devices and ensuring their long-term functionality. A planar crack of arbitrary shape in the isotropic plane of a three-dimensional (3D) transversely isotropic thermal PSC body subjected to combined thermal-electrical-mechanical loadings is studied via the extended displacement discontinuity (EDD) boundary integral equation method. Under the framework of linearized basic equations and one-way thermal coupling, the hypersingular boundary integral equations with the volume integrals containing the temperature and carrier concentration are obtained and expressed by the EDDs which include displacement, electric potential, carrier concentration and temperature discontinuities across the crack surfaces and are the basic variables in analyzing crack problems. Based on the finite part of hypersingular integrals, the EDDs near the crack border are proved to have the classical behavior of O(r). Furthermore, the asymptotic solutions of extended stresses including the stress, electric displacement, current density and heat flux at the crack front are presented and display classical singular behavior of O(1/r). The extended stress intensity factors are defined and given in terms of EDDs. A 3D numerical model of a penny-shaped crack in the thermal PSC cylinder is established and used to verify the presented formulae.