Abstract
Synchrotron x-ray diffraction analysis of GaAs(001) epilayers grown in situ by molecular-beam epitaxy shows clear evidence of As-As dimers on top of the outermost As layer. These dimers are ordered in a variable way between two structures which both show a $c(4\ifmmode\times\else\texttimes\fi{}4)$ symmetry but have different As content. Both structures have twofold symmetry although the unit cell is square.
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