Abstract
We report on the photo-conductivity studies of chemically synthesized graphene quantum dots (GQDs) of average size 12 nm obtained by the oxidative acid treatment of MWCNTs. The dependence of photocurrent Iph (Iph = Iill - Idark) on the laser intensity P under a wide range of laser intensities (5 mW ≤ P ≤ 60 mW) shows a fractional power dependence of Iph on light intensity. The temperature dependence (300 K < T < 50 K) of Iph observed in thin films of these GQDs indicates that in the higher temperature region (T > ∼100 K), as the temperature increases, the number of thermally generated carriers increase resulting in increased Iph. At sufficiently low temperatures (T ≤ 100 K), a constant Iph is observed, indicating a constant photo-carrier density. Such a behavior is typically observed in many photoactive disordered semiconductors, which are often used in a variety of applications. We believe that the investigations presented here will enhance our understanding of the photocurrent generation phenomenon in chemically obtained GQDs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
