Abstract
This manuscript examines the effects of memory-dependent and fractional-order derivatives on a novel generalized piezo-thermo-elastic semiconductor model. The medium is homogenous and orthotropic, subjected to photo-thermal excitation. The governing equations include fractional-order parameters, relaxation time, time delay, and kernel function tailored to specific problem requirements. Normal mode method use to solve the equations, yielding analytical expressions. Graphical representations show physical field distribution across various fractional-order parameters, kernel functions, time delay, and frequency values. This study has the potential to advance precise model development and future simulations.
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