Abstract

Using a full-relativistic version of the full-potential augmented plane wave plus local orbitals (FP-APW + lo) method within the local density approximation (LDA), we have studied the elastic, electronic and optical properties of the filled skutterudites CeFe 4As 12 and CeFe 4Sb 12. Structural parameters, including lattice constant, internal free parameters and, bulk modulus and its pressure derivative were calculated. We have determined the full set of first-order elastic constants, Young’s modulus, Poisson’s ratio and the Debye temperature of these compounds. Band structures, density of states, pressure coefficients of energy band gaps are also given. It is found that both CeFe 4As 12 and CeFe 4Sb 12 are indirect band gap semiconductors. The valence band maximum (VBM) is located at Γ point, whereas the conduction band minimum (CBM) is located at N point. Optical constants, including the dielectric function, optical reflectivity, refractive index and electron energy loss were calculated for radiation up to 30 eV. This is the first quantitative theoretical prediction of the elastic and optical properties for these compounds, and it still awaits experimental confirmation.

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