Abstract
MOS capacitors with 8 nm thick oxides have been irradiated by an 8 MeV LINAC electron beam. C-V and I-V measurements have shown a positive trapped charge, higher for irradiation performed under negative gate bias, as a consequence of preferential charge recombination at the cathodic interface. No saturation of the positive trapped charge is measured up to 20 Mrad(Si). Neutral defects induced by irradiation have been studied, by performing positive and negative Fowler-Nordheim injection. The distribution of neutral defects is similar to that of trapped holes, indicating a correlation between trapped holes and neutral defects. Electrical stresses performed after irradiation have shown that the accumulation kinetics of oxide defects is similar in both unirradiated and irradiated devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
