Abstract
We report the confirmed occurrence of Fowler–Nordheim (FN) electron tunnelling inp+ Si (SiOx)/self-assembled monolayers of 3-mercaptopropyltrimethoxysilane (MPTMS)/Austructures. The statistically favoured values of the effective mass andenergy barrier heights for electrons are determined to be in the ranges0.15–0.18 me and 1.3–1.5 eV, respectively. The electrically stressed breakdownof the monolayers is observed to take place at very high fields,i.e. 16–50 MV cm−1. Prior to the breakdown, switching of FN currents between different conduction states wasobserved; this is found to be related to a change in the electrical properties of monolayersowing to the creation of field-induced defects.
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