Abstract
ABSTRACTA decrease in the amplitude of Fowler-Nordheim current oscillations (FN-CO) due to interface roughness is observed for thin film (∼40Å) metal-oxide-semiconductor (MOS) devices, only when the interface has high spatial complexity. Previous studies have shown no measurable changes in FN-CO's resulting from the oxidation of purposely roughened Si surfaces. The present research continues with an FN-CO study using Si surfaces with roughness of higher spatial complexity than the previous studies. The spatial complexity of the purposely roughened Si surfaces was compared using the fractal dimension (DF). Atomic force microscopy (AFM) was used to measure the interface topography, and fractal dimension (DF) was used to describe the surface complexity while root-mean-square (RMS) roughness was used for obtaining vertical information of the roughness. It was found that the oscillation amplitude decrease substantially with an increase of DF but with no dependence on RMS.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
