Abstract

In this work, we have investigated the design, fabrication and testing of ZnO-on-SOI fourth-order contour mode disk resonators for mass sensing applications. This study aims to unveil the possibility for real-time practical mass sensing applications by using high-Q ZnO-on-SOI contour-mode resonators while taking into account their unique modal characteristics. Through focused ion beam (FIB) direct-write metal deposition techniques, the effects of localized mass loading on the surface of three extensional mode devices have been investigated. Ten microfabricated 40 mm-radius disk resonators, which all have a 20 mm-thick silicon device layer and 1 mm-thick ZnO transducer layer but varied anchor widths and numbers, have exhibited resonant frequencies ranging from 84.9 MHz to 86.7 MHz with Q factors exceeding 6000 (in air) and 10,000 (in vacuum), respectively. It has been found that the added mass at the nodal locations leads to noticeable Q-factor degradation along with lower induced frequency drift, thereby resulting in reduced mass sensitivity. All three measured devices have shown a mass sensitivity of ~1.17 Hz·fg−1 at the maximum displacement points with less than 33.3 ppm of deviation in term of fractional frequency change. This mass sensitivity is significantly higher than 0.334 Hz·fg−1 at the nodal points. Moreover, the limit of detection (LOD) for this resonant mass sensor was determined to be 367 ag and 1290 ag (1 ag = 10−18 g) for loaded mass at the maximum and minimum displacement points, accordingly.

Highlights

  • Miniaturized ultrasensitive devices for medical point-of-care and industrial portable systems are in huge demand

  • After the initial on-wafer probing test, the diced chip was mounted onto a printed circuit board (PCB) chip carrier while the device under test was connected to the external ports using a ball wire bonder

  • The anti-resonance peak observed by the two port ground-signal-ground (GSG) on-wafer probing measurement is mitigated by the extra parasitics introduced by the PCB chip carrier and wire bonds

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Summary

Introduction

Miniaturized ultrasensitive devices for medical point-of-care and industrial portable systems are in huge demand. Devices such as MEMS/NEMS mass sensors have rapidly evolved to a point that has enabled us to weigh single atoms with unparalleled precision [1]. In order to widely deploy these devices for real-world consumer applications, comprehensive studies need to be performed to understand the technological limits of every design. The MEMS/NEMS devices have great potential for a broad spectrum of ultrasensitive mass sensing applications, such as label-free monitoring of biological interactions [2], detection of gas molecules and volatile organic compounds [3], thickness measurement of the deposited thin films, and so on. Some of the most widely studied resonant mass sensors to date are quartz crystal microbalance (QCM), surface acoustic wave (SAW) resonators, and capacitively transduced

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