Abstract
Single-crystalline indium tin oxide (ITO) nanowires (NWs) were grown by the standard thermalevaporation method. The as-grown NWs were typically 100–300 nm in diameter and a fewµm long. Four-probe submicron Ti/Au electrodes on individual NWs were fabricated by theelectron-beam lithography technique. The resistivities of several single NWs have beenmeasured from 300 down to 1.5 K. The results indicate that the as-grown ITONWs are metallic, but disordered. The overall temperature behavior of resistivitycan be described by the Bloch–Grüneisen law plus a low-temperature correctiondue to the scattering of electrons off dynamic point defects. This observationsuggests the existence of numerous dynamic point defects in as-grown ITO NWs.
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