Abstract
In this letter we employed Fourier transform infrared spectroscopy (FTIR) to study fluorine-doped SnO2 films deposited by spray pyrolysis. The role of oxygen vacancy and substitution of fluorine for oxygen are demonstrated by FTIR. It is found that at low doping levels, fluorine ions prefer to occupy oxygen positions in SnO2 lattice. While beyond a certain doping level, fluorine ions start to occupy interstitial positions, which has a negative effect on carrier concentration that, in turn, affects the infrared reflectivity of SnO2 films. FTIR also shows the increase of the disorder of SnO2 films with increasing fluorine doping.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
