Abstract

Fourier-transform photocurrent spectroscopy (FTPS) was used as a very sensitive spectroscopic method to detect shallow and deep impurities (dopants) in CVD diamond layers. Detailed study of experimental conditions (temperature, frequency, electric field, bias light, surface conditions) was performed. Residual boron contamination was detected in many samples, phosphorus spectra were measured in P doped epitaxial layers. Anomalous (opposite) temperature dependence of the defect level with a threshold approximately 0.9 eV was detected and possible explanation of this effect was discussed.

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