Fourier Transform Infrared (FTIR) Analysis of Copper Oxide Thin Films Prepared by Metal Organic Chemical Vapor Deposition (MOCVD)

Abstract

AbstractFTIR results from cuprous oxide (Cu2O) and cupric oxide (CuO) films prepared by MOCVDtechnique were presented. According to FTIR and XRD results, Cu2O films can be prepared by MOCVD using 0.20 tort of copper acetylacetonate (Cu(acac)2) vapor and 150 torn of oxygen, at a deposition temperature of 340°C. The strong reductive tendency of Cu(acac)2 vapor in the MOCVD process is noted, as the oxidation state of copper was reduced from 2+ in Cu(acac)2 to 1+ in the Cu2O film. Cu2O films have a strong IR absorption band at 610 cm−1. CuO films were prepared at 0.20 tort of Cu(acac)2 vapor and 190 torr of oxygen, at a deposition temperature of 420°C. The IR bands of CuO films located at 440 cm−1, 480cm−1, and 540cm−1. The XRD results indicated that Cu2O films have a preferential orientation at (111) plane. From IR study, it appears that the MOCVD processing condition has an impact on the film microstructure, which in term influenced the band position and band shape of corresponding IR bands.