Fourier analysis of scratches generated on m‐GaN substrates during polishing

Abstract

Generation of scratches on surface of m‐plane GaN substrates due to polishing was studied by atomic force microscopy (AFM). For epi‐ready substrates AFM images confirm a flat surface with the atomic step roughness while a lot of scratches are visible in AFM images for partially polished GaN substrates. The Fourier analysis of AFM images show that scratches propagate easier along {c‐plane} and {a‐plane} directions on m‐plane GaN surface. This observation is an evidence of anisotropy of mechanical properties of GaN crystals in the micro‐scale. This anisotropy is directly correlated with the symmetry and atomic arrangement of m‐plane GaN.