Abstract
Efficient ultraviolet electroluminescence (UVEL) is obtained from metal-oxide-silicon (MOS) structures with the SiO2:Gd∕F active layers prepared by flash lamp annealing and Gd and F coimplantation. We observed a doubling of both the UVEL intensity and the defect related luminescence by increasing the fluorine concentration. This is due to suppression of the hot electron scattering on the donor-type level of the E′ center, the number of which is reduced by fluorine, and to increase of the optical active Gd3+ centers by Gd–F3 molecule formation. Also, fluorine coimplantation has no influence on the operating time of the MOS diode. Additionally, the flash lamp annealing doubled the ultraviolet electroluminescence from SiO2 layers implanted by gadolinium alone or in combination with fluorine. This is related to the suppression of cluster formation of rare earth atoms occurring during conventional annealing methods.
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