Abstract
A four-wavelength strained-layer InGaAs-GaAs-AlGaAs distributed feedback ridge waveguide quantum-well heterostructure laser array, with a lasing emission wavelength separation of ∼16 Å between adjacent emitters, is described. The four-wavelength array requires only a single MOCVD growth step. Lateral optical confinement is achieved with dry-etched lateral third-order gratings. Each element operates in the fundamental lateral mode with a near-field FWHM of 2.6±0.1 μm and the entire width of the near-field pattern is <80 μm.
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