Abstract
AbstractA GaMnAs ferromagnetic semiconductor film under compressive strain has strong biaxial in-plane anisotropy, which generates four stable magnetization directions at a zero magnetic field. This feature results in a double switching behavior in the main loop of planar Hall resistance (PHR) spectrum. The minor scan of PHR measurement exhibited staggered asymmetric loops due to the formation of the stable muti-domain structures. We demonstrated the observed four stable PHR states can be served as quaternary logic states for spin memory device.
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