Abstract
Test structures for the electrical characterization of ultrathin conductive films are presented based on electrodes on which the ultrathin film is deposited. Two different designs are discussed: a novel design with buried electrodes and a conventional design with electrodes at the surface. This paper includes test structure design and fabrication, and the electrical characterization of atomic layer deposition TiN films down to 4 nm. We demonstrate that the novel test structures provide the same results as the conventional structures, and have the advantage of broader materials choice (i.e., conductor-dielectric combination). The proposed structures can be used successfully to characterize sub-10 nm films.
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