Abstract
Abstract The four-point bend split-beam method is used to quantitatively determine the interfacial fracture resistance and crack velocity as a function of mechanical energy release rate of the weakest interface in a thin film stack. Various interfaces of importance to magnetic storage devices are studied, including copper or nickel–iron (permalloy) on silicon oxynitride with additional adhesion promoters. The dynamics and kinetics of the four-point bend test are fully elucidated. A model for environmentally-controlled crack growth previously applied to bulk ceramics is used here as a model for interfacial crack growth and is found to fit the kinetic data.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
