Abstract
An experimental investigation was made of an optical bistabiiity of layer e-GaSe single crystals of thickness 0.9 ” in optical contact with a dielectric mirror. Excitation with argon laser radiation (λ = 514.5 nm, focal spot diameter 60 ”, excitation power up to 80 mW) under static and dynamic conditions induced up to three consecutive optical hysteresis loops demonstrating the feasibility of operation of a thin-film bistable element as a four-level logic device.
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