Forward tunneling effect and metal-insulator transition in the BaTiO3 film/Si n-n heterojunction

Abstract

A n-n heterojunction composed of BaTiO3 film and silicon substrate was fabricated, and it shows good rectifying properties in the temperature range of 80–300K. The forward tunneling effect in the junction at low temperatures (<200K) is proved by the phenomenon that the current increases abruptly when the forward electrical voltage exceeds a high threshold (>12V). The temperature dependence of the junction resistance under a high forward field exhibits an electrical field controlled metal-insulator transition. The results were explained by using the band structure of the junction.