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Abstract
We investigated the doping concentration dependence of the barrier height and forward carrier transport mechanism in Ni/SiC Schottky barrier diodes (SBDs) in the wide range of 6.8 × 1015–. Forward current–voltage characteristics in heavily-doped SiC SBDs () can be well reproduced by a thermionic field emission model. The barrier height decreased with increasing doping concentration and the barrier height drop in the most heavily-doped SBD () was about 0.2 eV, which quantitatively agreed with the image force lowering of 0.18 eV caused by the high electric field.
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