Abstract
It is found by work function topography measurements that work function distribution over the surface of cadmium chalcogenide layers follows the Laplace law. The influence of such work function inhomogeneity on the forward thermionic emission current of metal-polycrystalline cadmium chalcogenide Schottky barrier diodes is theoretically examined. It is shown that if qβ ≦ kT, If ∼ exp Uf/β and is determined only by the degree of contact inhomogeneity β. Depending on temperature interval and parameters of semiconductor lg If is directly proportional to T or T−1. The experimental results of If−Uf and If−T cadmium chalcogenide Schottky diodes characteristics are analysed on the basis of the proposed model. Good agreement between the potential barrier inhomogeneity parameter, β, received by different methods is obtained. [Russian Text Ignored].
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