Abstract
Forward recoiling spectroscopy has been used to profile hydrogen concentrations in multilayer thin film electroluminescent (TFEL) structures grown by atomic layer epitaxy. The reversible current-voltage and brightness-voltage characteristics of an a.c. TFEL device were characterized. The hydrogen content in the dielectric/ZnS:Mn/dielectric structure was observed to be less than 0.5 at.%, near the detection limit. The analysis revealed, however, that the hydrogen content changed slightly depending on the treatment of the device.
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