Abstract
Device and test chip measurements show that forward body bias (FBB) can be used effectively to improve performance and reduce complexity of a 130-nm dual-V/sub T/ technology, reduce leakage power during burn-in and standby, improve circuit delay and robustness, and reduce active power. FBB allows performance advantages of low-temperature operation to be realized fully without requiring transistor redesign, and also improves V/sub T/ variations, mismatch, and saturation transconductance and output resistance product (g/sub m/×r/sub o/).
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