Abstract
The forward blocking characteristics of lateral power devices on SOI-substrate are analyzed using two-dimensional numerical device simulation and compared with measurements of LIGBT and LDMOS devices. The critical influence of different emitter structures on the leakage current and breakdown voltage of the LIGBT are discussed in detail. Sketching the trade-off between forward blocking and on-state voltage drop, it will be shown, that a LIGBT with convenient shorted anode can have a similar blocking characteristic compared to the LDMOS without sacrificing its superior on-state behaviour, even at temperatures up to 225/spl deg/C.
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