Abstract
ABSTRACTWe evaluate the performance capabilities and limitations of high voltage 4H-SiC based Bipolar Junction Transistors (BJTs). Experimental forward characteristics of a 4kV BJT are studied and simulations are employed to determine the factors behind the higher than expected specific on-resistance (Ron,sp) for the device. The impact of material (minority carrier lifetimes), processing (surface recombination velocity) and design (p contact spacing from the emitter mesa) parameters on the forward active performance of this device are discussed and ways to lower Ron,sp, below the unipolar level, and increase the gain (β) are examined. A correlation between the open base blocking behavior (forward blocking) and the current gain (forward active) for 4H-SiC based high-voltage BJTs with lightly doped collector regions is presented and experimental device characteristics are utilized to verify our numerical analysis.
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