Abstract
In this paper, the Monte Carlo method is applied to uniform and n/sup +/-n/sup -/-n/sup +/ structures of silicon to study the behavior of tail electrons and to develop a new set of hydrodynamic equations based on tail electron statistics. Each term in these equations is calibrated under both nonhomogeneous and homogeneous electric fields. Terms associated with surface integral of the carriers and carrier momentum over an iso energy surface: (/spl Escr/=/spl Escr//sub th/) are introduced. The new tail electron hydrodynamic model yields the density (n/sub 2/) and the average energy (w/sub 2/) of tail electrons and is shown to predict hot electron effects accurately.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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