Abstract
The 1/ f noise of double-injection p + nn + diodes is studied in gated silicon-on-sapphire (SOS) devices. It is confirmed that the noise is due to fluctuations in the “bulk” of the structure, and the current fluctuation spectral density S 1 very well fits the theoretical S 1 ∼ V 3 law, where V is the diode forward bias. The (small) dependence of the noise on the gate voltage suggests that the 1/ f noise is essentially generated in the back-part of the film near the sapphire (without being an interface noise). This could be a physical argument for a mobility (or scattering) noise origin in these devices.
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