Abstract
The 1/ f noise of double-injection p + nn + diodes is studied in gated silicon-on-sapphire (SOS) devices. It is confirmed that the noise is due to fluctuations in the “bulk” of the structure, and the current fluctuation spectral density S 1 very well fits the theoretical S 1 ∼ V 3 law, where V is the diode forward bias. The (small) dependence of the noise on the gate voltage suggests that the 1/ f noise is essentially generated in the back-part of the film near the sapphire (without being an interface noise). This could be a physical argument for a mobility (or scattering) noise origin in these devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
