Abstract
The measurements of the acceptor concentration dependence of the 85 K 1 ƒ noise in n-type Hg 1− xCd x Te monocrystals have been extended, by examining the effect of native, annealing induced Hg vacancies, over the conductivity type conversion point. Evidence is presented that the 1 ƒ noise arises from traps with unstable energy level position. In the strongly p-type material, the noise magnitude is found to approach a level which is suggested to be universal for semiconductors with high concentration of traps responsible for the 1 ƒ noise.
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