Abstract
The early stages of the interface formation of Fe deposited on Si(111)-(7 × 7) have been investigated as a function of Fe coverage and annealing temperature using the photoelectron diffraction technique. The intensity variation of the Si 2p and Fe 3p core levels was monitored in a full emission cone of a 60° polar angle and a 360° azimuthal angle. Annealing of 1 ML Fe to 150°C produces a well-ordered interface. From a detailed analysis of the intensity modulations of both core levels as a function of emission angles, we deduce that Fe atoms occupy substitutional positions underneath a top silicon layer.
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