Abstract
High quality AlGaN GaN heterostructures have been grown by metalorganic vapor phase epitaxy (MOVPE). The crystal quality was investigated by X-ray diffraction and Rutherford Backscattering (RBS). Cracking was observed near the interface of the AlGaN and GaN epilayer when the thickness of AlGaN layer exceeds a critical value. Following Matthews' model, a calculation of the critical thickness was performed which agrees with the experiment.
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