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Abstract
We demonstrate tuning of the Schottky barrier height, ϕ B of nickel–platinum alloy silicide ( Ni x Pt 1 - x Si ) contacts on n-type silicon by segregating sulfur at the silicide/Si interface. It is shown that while there is negligible effect of sulfur on the thermal stability and silicide resistance, extremely small barrier height values of 0.05–0.07 eV at the silicide/Si interface can be achieved by sulfur segregation.
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